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Same model may have multiple batches, images only for reference.
RN4612(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4612(TE85L,F)

Part No RN4612(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Datasheet
RN4612(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 300mW
Mounting Style SMD/SMT
Package SC-74, SOT-457
Manufacturer Device Package SM6
Win Source Part Number 101355-RN4612(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4612(TE85L,F) CAD Model

Description

This electronic component is a Transistor - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 101355-RN4612(TE85L,F)
  • Supply and Demand Status: Balanced
  • Transistor Configuration: Pre-biased, dual NPN and PNP
  • Maximum Power: 300mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Base Resistor: 22k
  • Frequency Transition: 200MHz

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19+ $9.2481 $175.7139
26+ $8.9501 $232.7026
34+ $8.6521 $294.1714
45+ $7.7570 $349.0650
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