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Same model may have multiple batches, images only for reference.
RN4905FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4905FE,LF

Part No RN4905FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4905FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 102758-RN4905FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4905FE,LF CAD Model

Description

The electronic component with Id 304563 is a product manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 102758-RN4905FE,LF
  • Category: Discrete Semiconductor Products
  • Status: Currently active
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Frequency Transition: 200MHz
  • Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Base Resistor (R1): 2.2k
  • Emitter Base Resistor (R2): 47k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Supply and Demand Status: Balanced

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165+ $0.7126 $117.5790
255+ $0.6895 $175.8225
350+ $0.6676 $233.6600
450+ $0.6456 $290.5200
600+ $0.5787 $347.2200
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