The RN4987(TE85L,F) is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This device is designed for load switching and power management applications. It features a low on-resistance, enabling efficient power control in a variety of electronic circuits.

Applications

• Load switching
• Power management in portable devices
• DC-DC converters
• Battery protection circuits

Features

• Low drain-source on-resistance (RDS(ON))
• High-speed switching
• Enhancement mode
• Surface mount package (SOT-23)

Benefits

• Improved energy efficiency due to low RDS(ON)
• Reduced power loss
• Smaller PCB footprint due to compact package
• Simplified circuit design

Additional Details

The RN4987(TE85L,F) P-channel MOSFET is characterized by its low drain-source on-resistance, which minimizes power dissipation and enhances overall energy efficiency. This is particularly important in battery-powered devices where extending battery life is critical. The high-speed switching capability allows for rapid and efficient switching operations, beneficial in DC-DC converters and other power control applications. The enhancement mode operation ensures the MOSFET is normally off, preventing unwanted current flow when the gate voltage is zero, thus improving system safety.

The device comes in a small surface mount package (SOT-23), allowing for high-density mounting on printed circuit boards. This reduces the overall size and weight of the electronic device, making it ideal for portable applications. The RDS(ON) is typically around 0.3 ohms at a gate-source voltage (VGS) of -4.5V, and the drain current (ID) can reach up to -1A. The maximum gate-source voltage is ±20V, and the maximum drain-source voltage is -30V. The low gate charge (Qg) contributes to faster switching speeds and reduced power dissipation.

The RN4987(TE85L,F) is also used in battery protection circuits to prevent overcharging and over-discharging of batteries. Its low on-resistance and high-speed switching capabilities make it an ideal component for these applications. The MOSFET is designed to operate over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

The device complies with RoHS standards, meaning it is lead-free and environmentally friendly. The compact size and high performance of the RN4987(TE85L,F) make it a popular choice for power management in a wide range of electronic devices, including smartphones, tablets, and other portable devices.

In summary, the RN4987(TE85L,F) from Toshiba Semiconductor and Storage is a versatile and efficient P-channel MOSFET that offers low on-resistance and high-speed switching. Its compact size and reliable performance make it a valuable component in modern electronic designs.