The Toshiba Semiconductor and Storage SSM3J120TU,LF is a P-channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 4A @ 25°C.

• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 4A @ 25°C
• Maximum Rds On: 38 mOhm @ 3A, 4V
• Gate-Source Threshold Voltage: 1V @ 1mA
• Maximum Gate-Source Voltage: ±8V
• Maximum Gate Charge: 22.3nC @ 4V
• Input Capacitance: 1484pF @ 10V
• Package: 3-SMD, flat leads UFM
• Power Dissipation: 500mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Suitable for: discrete semiconductor products
• Operating Temperature: 150°C (TJ)
• Supply and Demand Status: sufficient