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SSM3K116TU,LF

Part No SSM3K116TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.2A UFM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 100μA
Max Input Capacitance 245pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 500mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 100859-SSM3K116TU,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K116TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K116TU,LF is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 2.2A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.2A @ 25°C
  • Maximum Input Capacitance: 245pF @ 10V
  • Maximum Rds On: 100 mOhm @ 500mA, 4.5V
  • Supply and Demand Status: Balanced
  • Packaging: 3-SMD, flat leads with a UFM case

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0843 $57.7455
1,670+ $0.0693 $115.7310
2,590+ $0.0670 $173.5300
3,575+ $0.0647 $231.3025
4,550+ $0.0635 $288.9250
6,125+ $0.0566 $346.6750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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