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SSM3K123TU

Part No SSM3K123TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.2A UFM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 13.6nC @ 4V
Max Input Capacitance 1010pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 3A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 192952-SSM3K123TU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K123TU CAD Model

Description

The SSM3K123TU is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Application: Perfect for use in a variety of electronic applications.
  • Maximum Rds On: 28 mOhm @ 3A, 4V
  • Continuous Drain Current @ 25°C: 4.2A (Ta)
  • Maximum Gate-Source Voltage: ±10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2552 $51.0400
480+ $0.2094 $100.5120
740+ $0.2029 $150.1460
1,020+ $0.1964 $200.3280
1,320+ $0.1898 $250.5360
1,765+ $0.1702 $300.4030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 69,860 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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