The SSM3K15ACTC,L3F is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for low-voltage switching applications, providing efficient and reliable performance in a compact package.

Applications

• Load switches
• DC-DC converters
• Power management circuits
• Portable devices
• Battery-powered applications
• Small signal switching

Features

• Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
• Low Gate Charge (Qg): Enables high-speed switching.
• Small Package: Facilitates compact designs.
• Logic Level Gate Drive: Allows direct drive from logic circuits.
• RoHS Compliant: Environmentally friendly.

Benefits

• High Efficiency: Reduces power consumption and heat generation.
• Fast Switching Speed: Enables high-frequency operation.
• Compact Design: Saves board space and reduces system size.
• Easy to Use: Simplified gate drive requirements.
• Reliable Performance: Ensures stable and consistent operation.

Technical Specifications

The SSM3K15ACTC,L3F features a low on-resistance (RDS(on)) typically around 0.135 ohms at a gate-source voltage (VGS) of 4.5V. It has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 2A. The gate threshold voltage (VGS(th)) is typically around 1.0V, which allows for effective operation with logic-level signals. It is available in a small SOT-23 package. The MOSFET is designed to operate within a temperature range of -55°C to +150°C. The low gate charge (Qg) ensures fast switching speeds, improving the overall efficiency of the application. This MOSFET is ideal for a variety of low-voltage switching applications where efficiency and compact size are critical.