SSM3K15AFS,LF

Part No SSM3K15AFS,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 0.1A SSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 13.5pF @ 3V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100mW (Ta)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SSM
Dimension SC-75, SOT-416
Win Source Part Number 100342-SSM3K15AFS,LF
Popularity Medium
Supply and Demand Status Balance

Description

The Toshiba Semiconductor and Storage SSM3K15AFS,LF is a MOSFET transistor that operates in N-Channel polarity. It has a maximum power dissipation of 100mW (Ta) and a drain-source breakdown voltage of 30V. The continuous drain current at 25°C is 100mA (Ta), and the gate-source threshold voltage is 1.5V @ 100μA. The maximum input capacitance is 13.5pF @ 3V, and the maximum Rds On at Id, Vgs is 3.6 Ohm @ 10mA, 4V. It comes in the SC-75, SOT-416 package and is mounted on SMD (SMT) technology. This product is categorized under Discrete Semiconductor Products and has a medium popularity.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
1,860+ $0.0269 $50.0340
3,970+ $0.0252 $100.0440
6,175+ $0.0243 $150.0525
8,850+ $0.0226 $200.0100
11,525+ $0.0217 $250.0925
14,355+ $0.0209 $300.0195
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 11,500 pieces
MOQ: 1860 pcs
Order Increment : 1 pcs
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