The Toshiba Semiconductor and Storage SSM3K15AMFV,L3F MOSFET is a N-Channel polarity device with a Drain-Source Breakdown Voltage of 30V.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 30V
• Maximum Rds On @ Id,Vgs: 3.6 Ohm @ 10mA, 4V
• Continuous Drain Current @ 25°C: 100mA (Ta)
• Package: VESM
• Dimensions: SOT-723
• Gate-Source Threshold Voltage: 1.5V @ 100μA
• Maximum Input Capacitance: 13.5pF @ 3V
• Category: Discrete Semiconductor Products
• Power Dissipation (Max): 150mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Maximum Gate-Source Voltage: ±20V
• Status: Active
• Temperature Range - Operating: 150°C (TJ)