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Same model may have multiple batches, images only for reference.
SSM3K301T Real Image
Same model may have multiple batches, images only for reference.

SSM3K301T

Part No SSM3K301T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.5A TSM
Datasheet
SSM3K301T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Max Gate Charge 4.8nC @ 4V
Max Input Capacitance 320pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 192995-SSM3K301T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K301T CAD Model

Description

The Toshiba Semiconductor and Storage electronic component is a medium-popularity product with a sufficient supply and demand status.

  • Component: MOSFET technology with N-channel polarity.
  • Win Source Part Number: 192995-SSM3K301T
  • Recommendation: recommended for electronic devices that require a specific type of MOSFET technology.
  • Power dissipation: 700mW (Ta)
  • Drain-source breakdown voltage: 20V
  • Continuous drain current @ 25°C: 3.5A (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,440 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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