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Same model may have multiple batches, images only for reference.
SSM3K131TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K131TU,LF

Part No SSM3K131TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27.6mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 15 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3K131
Other Names SSM3K131TULFCT,SSM3K131TULFTR,SSM3K131TULFDKR,SSM3K131TU,LF(B
Standard Package 3,000
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277949-SSM3K131TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K131TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K131TU,LF is an N-Channel MOSFET transistor with a drain to source voltage of 30V and a continuous drain current of 6A (Ta) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Mounting Technology: SMD (SMT)
  • Package/Case: 3-SMD, Flat Leads
  • Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
  • Temperature Range: 150°C
  • ECCN: EAR99

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420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
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MOQ: 175 pcs
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