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Same model may have multiple batches, images only for reference.
SSM3K7002BS,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K7002BS,LF

Part No SSM3K7002BS,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200MA SMD
Datasheet
SSM3K7002BS,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 17pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 098817-SSM3K7002BS,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K7002BS,LF CAD Model

Description

This N-channel MOSFET manufactured by Toshiba Semiconductor and Storage has a Win Source Part Number of 098817-SSM3K7002BS,LF.

  • Maximum Power Dissipation: 200mW (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Mounting: SMD (SMT)
  • Packaging: reel
  • Temperature Range: 150°C (TJ)
  • Status: obsolete (EOL)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,285+ $0.0253 $57.8105
5,560+ $0.0208 $115.6480
8,575+ $0.0203 $174.0725
11,835+ $0.0196 $231.9660
15,340+ $0.0189 $289.9260
20,550+ $0.0169 $347.2950
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Availability: 30,000 pieces
MOQ: 2285 pcs
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