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Same model may have multiple batches, images only for reference.
SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K302T(TE85L,F)

Part No SSM3K302T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3A TSM
Datasheet
SSM3K302T(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Max Gate Charge 4.3nC @ 4V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 71 mOhm @ 2A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 097623-SSM3K302T(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K302T(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K302T(TE85L,F) is an N-channel MOSFET designed for surface mount (SMT) mounting.

  • Power dissipation: 700mW (Ta)
  • Category: Discrete Semiconductor Products
  • Temperature range: 150°C (TJ)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-source breakdown voltage: 30V
  • Continuous drain current: 3A (Ta)
  • Maximum gate-source voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 71 mOhm @ 2A, 4V
  • Supply and demand status: sufficient.

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