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Same model may have multiple batches, images only for reference.
SSM3K337R,LF Real Image
Same model may have multiple batches, images only for reference.

SSM3K337R,LF

Part No SSM3K337R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 38V 2A
Datasheet
SSM3K337R,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 38V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 1.7V @ 1mA
Max Gate Charge 3nC @ 10V
Max Input Capacitance 120pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 1102301-SSM3K337R,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K337R,LF CAD Model

Description

The Toshiba SSM3K337R,LF is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 38V
  • Continuous Drain Current @ 25°C: 2A (Ta)
  • Gate-Source Threshold Voltage: 1.7V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 2A, 10V
  • Case: SOT-23F
  • Compatible With: SOT-23-3 Flat Leads dimensions
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Supply and Demand Status: Balance

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