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Same model may have multiple batches, images only for reference.
SSM3K7002BSU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K7002BSU,LF

Part No SSM3K7002BSU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V .2A USM
Datasheet
SSM3K7002BSU,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3.1V @ 250μA
Max Input Capacitance 17pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package USM
Dimension SC-70, SOT-323
Win Source Part Number 030886-SSM3K7002BSU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K7002BSU,LF CAD Model

Description

The Toshiba Semiconductor and Storage 030886-SSM3K7002BSU,LF is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 2.1 Ohm @ 500mA, 10V
  • Maximum Power Dissipation: 150mW (Ta)
  • Drive Voltage: 4.5V, 10V
  • Case: USM
  • Mounting: SMD (SMT)
  • Gate-Source Threshold Voltage: 3.1V @ 250μA
  • Maximum Input Capacitance: 17pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: 150°C (TJ)
  • Supply and Demand Status: sufficient

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