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Same model may have multiple batches, images only for reference.
SSM6L36FE,LM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6L36FE,LM

Part No SSM6L36FE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 0.5A/0.33A ES6
Datasheet
SSM6L36FE,LM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA, 330mA
Maximum Rds On at Id,Vgs 630 mOhm @ 200mA, 5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1.23nC @ 4V
Max Input Capacitance 46pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 101431-SSM6L36FE,LM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6L36FE,LM CAD Model

Description

The Toshiba Semiconductor and Storage 101431-SSM6L36FE,LM is an active electronic component categorized under discrete semiconductor products.

  • FET Type: N and P-channel
  • Feature: Logic level gate
  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 150mW
  • Temperature Range: 150°C (TJ)
  • Ideal for: Use in various circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1398 $50.3280
875+ $0.1147 $100.3625
1,355+ $0.1111 $150.5405
1,865+ $0.1075 $200.4875
2,410+ $0.1039 $250.3990
3,220+ $0.0932 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 76,000 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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