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SSM6N05FU(TE85L,F)

Part No SSM6N05FU(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 20V 0.4A 6-PIN SSOP T/r
Sample
Rohs State rohs
ECAD Module
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RoHS Compliant
Win Source Part Number 1128254-SSM6N05FU(TE85L,F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSM6N05FU(TE85L,F) CAD Model

Description

The SSM6N05FU(TE85L,F) is a dual N-channel MOSFET from Toshiba Semiconductor and Storage, designed for high-efficiency power management and load switch applications. This device offers a low on-resistance, enabling efficient power conversion and minimizing power loss. Its compact package and optimized design make it suitable for space-constrained applications in portable devices and power supplies.

Applications:

  • Load switch applications in portable devices such as smartphones, tablets, and laptops.
  • Power management circuits for efficient DC-DC conversion.
  • Battery protection circuits to prevent overcharge and over-discharge.
  • Motor control circuits for small DC motors.
  • LED driving circuits in various lighting applications.

Features:

  • Dual N-channel MOSFET configuration: Allows for flexible circuit designs and space savings.
  • Low on-resistance (RDS(on)): Minimizes power loss and improves efficiency. Typical RDS(on) values are in the milliohm range, depending on the gate voltage.
  • Low threshold voltage (Vth): Enables operation with low-voltage logic signals.
  • Compact SOT-963 package: Suitable for high-density mounting and miniaturized applications.
  • Fast switching speed: Allows for efficient operation in high-frequency switching circuits.
  • Gate-Source Voltage (VGSS) of ±8 V: provides robustness against unwanted turn-on.
  • Drain-Source Voltage (VDSS) of 20V: allows this MOSFET to be used in a variety of applications.

Benefits:

  • Improved power efficiency: The low on-resistance reduces power dissipation, leading to longer battery life in portable devices.
  • Space savings: The compact package allows for smaller and more compact designs.
  • Simplified circuit design: The dual N-channel configuration simplifies circuit layout and reduces component count.
  • Enhanced thermal performance: Efficient heat dissipation ensures stable operation even at high current levels.
  • Reliable operation: Toshiba's high-quality manufacturing processes ensure reliable performance and long lifespan.

Additional Details:

The SSM6N05FU(TE85L,F) is RoHS compliant and halogen-free, making it environmentally friendly. It is designed for surface mount technology (SMT) assembly. The device is typically driven by a gate voltage between 1.5V and 4.5V. Detailed specifications, including RDS(on) values at different gate voltages and temperature characteristics, can be found in the official Toshiba datasheet. The 'TE85L,F' suffix indicates the specific taping and reel packaging.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,046 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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