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Same model may have multiple batches, images only for reference.
SSM6N37FE,LM Real Image
Same model may have multiple batches, images only for reference.

SSM6N37FE,LM

Part No SSM6N37FE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.25A 2-2N1D
Datasheet
SSM6N37FE,LM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 250mA
Maximum Rds On at Id,Vgs 2.2 Ohm @ 100mA, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 12pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 096459-SSM6N37FE,LM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N37FE,LM CAD Model

Description

The Toshiba Semiconductor and Storage 2 N-Channel (Dual) FET is a logic level gate component with a maximum power dissipation of 150mW.

  • FET Type: 2 N-Channel (Dual)
  • Gate Type: Logic level gate
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 250mA
  • Mounting: SMD (SMT) mounted
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8073 $60.5475
175+ $0.6630 $116.0250
270+ $0.6422 $173.3940
375+ $0.6214 $233.0250
485+ $0.6006 $291.2910
645+ $0.5382 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 241,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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