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TBC857B

Part No TBC857B
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description X34 PB-F SOT-23 TRANSISTOR FOR L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 650mV @ 100mA, 5mA
Collector Cut-off Current(Max) 30nA (ICBO)
Typical Gain (hFE) (Min) 210 @ 2mA, 5V
Maximum Power Dissipation 320mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 355750-TBC857B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TBC857B CAD Model

Description

The Toshiba Semiconductor and Storage TBC857B is a high-performance PNP transistor that is designed for various applications in the electronic industry.

  • Manufacturer: Toshiba, a renowned brand in the semiconductor and storage industry
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 150mA
  • Description: This component is suitable for use in various electronic devices, and it is a reliable and efficient component for your electronic needs.

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