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Same model may have multiple batches, images only for reference.
TDTA114E,LM
Same model may have multiple batches, images only for reference.

TDTA114E,LM

Part No TDTA114E,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description PB-F BIAS RESISTOR BUILT-IN TRAN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 320 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Base Product Number TDTA114
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1115814-TDTA114E,LM
Ultra Librarian 3D Model Ultra Librarian TDTA114E,LM CAD Model

Description

The 1115814-TDTA114E,LM is a pre-biased PNP bipolar transistor from Toshiba Semiconductor and Storage.

  • Package: SOT-23-3
  • Mounting Type: Surface Mount
  • Packaging: Tape and Reel
  • Power Dissipation: 320mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current (Ic): 100mA
  • Vce Saturation: 300mV @ 500μA (Ib) and 10mA (Ic)
  • DC Current Gain (hFE): Minimum 30 @ 5mA (Ic) and 5V (Vce)
  • Transition Frequency: 250MHz
  • Applications: Amplifiers, oscillators, and switching circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
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Availability: 5,310 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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