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TK10A60D(STA4,Q,M)

Part No TK10A60D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1000869-TK10A60D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Consumer Electronics, Portable Devices
Ultra Librarian 3D Model Ultra Librarian TK10A60D(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage 1000869-TK10A60D(STA4,Q,M) is a high-performance MOSFET that is designed for use in various electronic devices.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10A (Ta)
  • Maximum Rds On @ Id,Vgs: 750 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 1350pF @ 25V
  • Mounting Type: Through-Hole
  • Applications: Industrial, Power Management, Consumer Electronics, Portable Devices
  • Popularity: Medium
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8945 $53.6700
140+ $0.7340 $102.7600
215+ $0.7111 $152.8865
295+ $0.6881 $202.9895
380+ $0.6652 $252.7760
505+ $0.5964 $301.1820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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