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Same model may have multiple batches, images only for reference.
TK10A80E,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK10A80E,S4X

Part No TK10A80E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V TO220SIS / Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVIII
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2000pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 50W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 796822-TK10A80E,S4X
Popularity Medium
Supply and Demand Status Limited
Family Name TK10A80E
Introduction Date March 04, 2014
ECCN EAR99
Country of Origin China
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian TK10A80E,S4X CAD Model

Description

This MOSFET component comes in a TO-220-3 Full Pack, Isolated Tab package, and the series is π-MOSVIII.

  • Maximum drain source voltage: 800V
  • Maximum gate-source voltage: ±30V
  • Maximum power dissipation: 50W (Tc)
  • Manufacturer homepage: www.toshiba.semicon-storage.com

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Quantity Unit Price Ext. Price
75+ $0.7868 $59.0100
160+ $0.7361 $117.7760
245+ $0.7107 $174.1215
355+ $0.6600 $234.3000
460+ $0.6346 $291.9160
570+ $0.6091 $347.1870
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