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Same model may have multiple batches, images only for reference.
TK13A50D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK13A50D(STA4,Q,M)

Part No TK13A50D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 13A TO220SIS  /  N-Channel 500 V 13A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK13A50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK13A50D(STA4QM),TK13A50DSTA4QM
Standard Package 50
Win Source Part Number 1007500-TK13A50D(STA4,Q,M)
Ultra Librarian 3D Model Ultra Librarian TK13A50D(STA4,Q,M) CAD Model

Description

The TK13A50D(STA4,Q,M) is a MOSFET transistor designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Drain-to-Source Voltage: 500V
  • Continuous Drain Current: 13A @ 25°C
  • Maximum Rds On: 400mOhm @ 6.5A, 10V
  • Power Dissipation: 45W
  • Gate Charge (Qg): 38 nC @ 10V
  • Input Capacitance (Ciss): 1800 pF @ 25V
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack
  • Manufacturer: Toshiba Semiconductor and Storage
  • Maximum Operating Temperature: 150°C (TJ)

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