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Same model may have multiple batches, images only for reference.
TK14A65W,S5X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK14A65W,S5X

Part No TK14A65W,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.7A TO-220
Datasheet
TK14A65W,S5X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 690μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 6.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050254-TK14A65W,S5X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK14A65W,S5X CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-quality electronic component that is perfect for various applications.

  • Power Dissipation: 40W (Tc)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 13.7A (Ta)
  • Rds On @ Id,Vgs: 250 mOhm @ 6.9A, 10V
  • Mounting: through hole
  • Package: TO-220SIS

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0282 $60.8460
70+ $1.6644 $116.5080
110+ $1.6124 $177.3640
150+ $1.5604 $234.0600
195+ $1.5084 $294.1380
260+ $1.3525 $351.6500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,600 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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