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TK14E65W,S1X

Part No TK14E65W,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.7A TO-220 / Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 690μA
Gate Charge (Qg) (Maximum) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1300pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 130W (Tc)
Rds On (Maximum) @ Id, Vgs 250 mOhm @ 6.9A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 796827-TK14E65W,S1X
Popularity Medium
Supply and Demand Status Balance
Family Name TK14E65W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK14E65W,S1X CAD Model

Description

The Toshiba Semiconductor and Storage TK14E65W,S1X DTMOSIV MOSFET is a reliable product.

  • Maximum power dissipation: 130W (Tc)
  • Maximum Rds On: 250 mOhm @ 6.9A, 10V
  • Package: TO-220-3
  • Gate charge (Qg): 35nC @ 10V
  • Vgs(th): 3.5V @ 690μA
  • Input capacitance (Ciss): 1300pF @ 300V
  • Vgs (Maximum): ±30V
  • Operating temperature range: 150°C (TJ)
  • ECCN: EAR99
  • EOL date: 2030

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.1901 $72.7604
8+ $14.9249 $119.3992
12+ $14.4583 $173.4996
17+ $13.9917 $237.8589
22+ $13.5262 $297.5764
29+ $12.1263 $351.6627
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,260 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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