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TK16A60W5,S4VX

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Part No	TK16A60W5,S4VX
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 15.8A TO220SIS / N-Channel 600 V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	40W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK16A60
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TK16A60W5S4VX
Standard Package	50
Win Source Part Number	1019253-TK16A60W5,S4VX
Ultra Librarian 3D Model	Ultra Librarian TK16A60W5,S4VX CAD Model

Alternative Products

Description

The TK16A60W5 is a high-quality N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

Channel Type: N-channel
Drain to Source Voltage (Vdss): 600 V
Current Rating: 15.8A (Ta)
FET Type: Super Junction
Maximum Rds On: 190mOhm @ 7.9A, 10V
Gate Charge (Qg): 43 nC @ 10 V
Input Capacitance (Ciss): 1350 pF @ 300 V
Package: TO-220-3 Full Pack
Temperature Range: 150°C (TJ)
Packaging: Tube

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