The TK16A60WS4VX(M is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high voltage and high current applications, offering low on-resistance and fast switching speeds, making it suitable for various power switching and control circuits.

Applications

• Switching power supplies
• Motor control circuits
• DC-DC converters
• Inverters
• Lighting control systems

Features

• N-channel MOSFET
• VDSS = 600V
• ID = 16A
• RDS(on) = 0.36Ω (max) @ VGS = 10V
• Low gate charge
• Fast switching speed
• RoHS compliant

Benefits

• High efficiency due to low on-resistance, reducing power loss
• Improved switching performance with fast switching speed
• Enhanced thermal characteristics, enabling higher power density
• Reliable operation in high voltage applications
• Environmentally friendly due to RoHS compliance

Additional Details

The TK16A60WS4VX(M features a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 16A. It has a maximum on-resistance (RDS(on)) of 0.36Ω at a gate-source voltage (VGS) of 10V. The low gate charge contributes to faster switching speeds and reduced switching losses. The MOSFET is available in a TO-247 package, which offers excellent thermal performance.

The component is designed to provide robust and reliable performance in demanding power applications. Its high voltage rating and low on-resistance make it a suitable choice for high-efficiency power conversion circuits.