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TK18A50D

Part No TK18A50D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 18A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 091455-TK18A50D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK18A50D CAD Model

Description

It has a balanced supply and demand status and is a common-used part.

  • GPTDescription: This component is designed for use in electronic devices that require a reliable and efficient power supply.
  • GPTDescription: It has a maximum power dissipation of 50W and a continuous drain current of 18A @ 25°C.
  • GPTDescription: The TK18A50D is a high-performance device that is ideal for use in various applications.
  • GPTDescription: With its advanced features and robust design, this MOSFET is a popular choice among electronic manufacturers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1895 $50.3585
56+ $1.7966 $100.6096
87+ $1.7404 $151.4148
119+ $1.6843 $200.4317
154+ $1.6281 $250.7274
206+ $1.4597 $300.6982
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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