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Same model may have multiple batches, images only for reference.
TK190A65Z,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK190A65Z,S4X

Part No TK190A65Z,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220SIS / N-Channel 650 V 15A (Ta) 40W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 300 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK190A65
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-TK190A65Z,S4X,264-TK190A65Z,S4X-ND,264-TK190A65ZS4X,TK190A65Z,S4X(S
Standard Package 50
Win Source Part Number 1025052-TK190A65Z,S4X
Ultra Librarian 3D Model Ultra Librarian TK190A65Z,S4X CAD Model

Description

The TK190A65Z,S4X is a Transistors - FETs, MOSFETs - Single electronic component manufactured by Toshiba Semiconductor and Storage.

  • Mounting Type: Through-Hole
  • FET Type: N-Channel
  • Drain-to-Source Voltage: 650 V
  • Continuous Drain Current: 15A @ 25°C
  • On-Resistance: 190mOhm @ 7.5A and 10V
  • Gate Charge: 25 nC @ 10 V
  • Input Capacitance: 1370 pF @ 300 V
  • Package: TO-220-3 Full Pack
  • Operating Temperature: 150°C
  • Application: Discrete Semiconductor Products

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