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Same model may have multiple batches, images only for reference.
TK39N60W5,S1VF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK39N60W5,S1VF

Part No TK39N60W5,S1VF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 38.8A T0247
Datasheet
TK39N60W5,S1VF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1.9mA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 4100pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 74 mOhm @ 19.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 137250-TK39N60W5,S1VF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK39N60W5,S1VF CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel power transistor with a maximum power dissipation of 270W (Tc).

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 38.8A (Ta)
  • Gate-Source Threshold Voltage: 4.5V @ 1.9mA
  • Maximum Input Capacitance: 4100pF @ 300V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id, Vgs: 74 mOhm @ 19.4A, 10V
  • Package: TO-247-3
  • Mounting: through hole

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36+ $2.8038 $100.9368
56+ $2.7162 $152.1072
77+ $2.6285 $202.3945
99+ $2.5409 $251.5491
132+ $2.2781 $300.7092
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