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Same model may have multiple batches, images only for reference.
TK3A60DA(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK3A60DA(STA4,Q,M)

Part No TK3A60DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A TO220SIS / N-Channel 600 V 2.5A (Ta) 30W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK3A60
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK3A60DA(STA4QM),TK3A60DASTA4QM
Standard Package 50
Win Source Part Number 1001833-TK3A60DA(STA4,Q,M)
Ultra Librarian 3D Model Ultra Librarian TK3A60DA(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK3A60DA(STA4,Q,M) is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Series: π-MOSVII series
  • Package: Tube
  • MSL level: 1 (unlimited)
  • HTSUS: 8541.29.0095
  • Drive voltage (max Rds on, min Rds on): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6380 $51.0400
195+ $0.5235 $102.0825
300+ $0.5072 $152.1600
410+ $0.4908 $201.2280
530+ $0.4744 $251.4320
710+ $0.4254 $302.0340
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Availability: 9,995 pieces
MOQ: 80 pcs
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