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Same model may have multiple batches, images only for reference.
TK40E06N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK40E06N1,S1X

Part No TK40E06N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 40A TO-220 / Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220 Magazine
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 300μA
Gate Charge (Qg) (Maximum) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1700pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 67W (Tc)
Rds On (Maximum) @ Id, Vgs 10.4 mOhm @ 20A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 796841-TK40E06N1,S1X
Popularity Medium
Supply and Demand Status Balance
Family Name TK40E06N1
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK40E06N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage TK40E06N1,S1X is a MOSFET product.

  • Series: U-MOSVIII-H
  • Maximum current rating: 40A
  • Maximum voltage rating: 60V
  • Package: TO-220-3
  • Mounting style: through-hole
  • Power dissipation: 67W
  • Rds On: 10.4 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,240 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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