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TK45P03M1,RQ(S

Part No TK45P03M1,RQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 45A DPAK-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1500pF @ 10V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 9.7 mOhm @ 22.5A, 10V
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107441-TK45P03M1,RQ(S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK45P03M1,RQ(S CAD Model

Description

The MOSFET, with Win Source Part Number 1107441-TK45P03M1, RQ(S), is a N-Channel polarity electronic component that belongs to the Discrete Semiconductor Products category manufactured by Toshiba Semiconductor and Storage.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 45A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 200μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 1500pF @ 10V
  • Maximum Rds On @ Id, Vgs: 9.7 mOhm @ 22.5A, 10V
  • Package: DPAK
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT) technology
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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