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TK4A55DA(STA4,Q,M)

Part No TK4A55DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 3.5A TO-220SIS
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 2.45 Ohm @ 1.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 108175-TK4A55DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK4A55DA(STA4,Q,M) CAD Model

Description

The electronic component with Id 374268 is a MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • This N-Channel transistor has a maximum power dissipation of 30W (Tc) and a drain-source breakdown voltage of 550V.
  • It has a continuous drain current of 3.5A (Ta) @ 25°C and a gate-source threshold voltage of 4.4V @ 1mA.
  • The maximum gate-source voltage is ±30V.
  • The product is packaged in a TO-220SIS case and is available in a tube/rail packaging.
  • The supply and demand status of this product is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.9081 $62.1729
21+ $5.6676 $119.0196
32+ $5.4909 $175.7088
44+ $5.3142 $233.8248
57+ $5.1363 $292.7691
76+ $4.6050 $349.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,890 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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