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Same model may have multiple batches, images only for reference.
TK4A65DA(STA4,Q,M) Real Image
Same model may have multiple batches, images only for reference.

TK4A65DA(STA4,Q,M)

Part No TK4A65DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 3.5A TO220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK4A65
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 876298-TK4A65DA(STA4,Q,M)
Ultra Librarian 3D Model Ultra Librarian TK4A65DA(STA4,Q,M) CAD Model

Description

The 876298-TK4A65DA(STA4,Q,M) is an N-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Series: π-MOSVII
  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs
  • Vdss: 650V
  • Id: 3.5A @ 25°C
  • Rds On (Max): 1.9Ohm @ 1.8A and 10V
  • Vgs(th) (Max): 4.4V @ 1mA
  • Power Dissipation: 35W
  • Package: TO-220-3 Full Pack
  • Mounting Type: Through-Hole
  • Qg: 12nC @ 10V
  • Ciss: 600pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active

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