The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel transistor that operates with a drain-source breakdown voltage of 550V and a continuous drain current of 4A @ 25°C.

• With a maximum power dissipation of 80W (Tc), it is suitable for use in various discrete semiconductor products.
• The MOSFET features a gate-source threshold voltage of 4.4V @ 1mA and a maximum Rds On @ Id,Vgs of 1.88 Ohm @ 2A, 10V.
• It has a maximum input capacitance of 490pF @ 25V and a maximum gate-source voltage of ±30V.
• The MOSFET is packaged in a D-Pak case and is mounted using SMD (SMT) technology.
• The supply and demand status is balanced.