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Same model may have multiple batches, images only for reference.
TK4P60DA(T6RSS-Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK4P60DA(T6RSS-Q)

Part No TK4P60DA(T6RSS-Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.5A DPAK-3
Datasheet
TK4P60DA(T6RSS-Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 1.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107445-TK4P60DA(T6RSS-Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK4P60DA(T6RSS-Q) CAD Model

Description

It has a sufficient supply and demand status and is designed for use in discrete semiconductor products.

  • Features: Reliable and efficient power source for electronic devices
  • Performance: Designed for high-level performance with excellent quality and durability
  • Manufacturer: Toshiba
  • Reputation: Well-known and reputable company in the electronics industry
  • Selection: Great choice for reliable and high-quality electronic component

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