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TK60D08J1(Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK60D08J1(Q)

Part No TK60D08J1(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 60A TO220W
Datasheet
TK60D08J1(Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 5450pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220(W)
Dimension TO-220-3
Win Source Part Number 1107452-TK60D08J1(Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK60D08J1(Q) CAD Model

Description

The Toshiba Semiconductor and Storage TK60D08J1(Q) is an obsolete (EOL) medium-popularity N-channel MOSFET with a TO-220(W) case/package.

  • Maximum Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 60A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Suitable for: Use in Various Electronic Circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.1015 $65.5075
13+ $10.7499 $139.7487
19+ $10.4148 $197.8812
26+ $10.0784 $262.0384
34+ $9.7421 $331.2314
45+ $8.7344 $393.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,700 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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