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Same model may have multiple batches, images only for reference.
TK6A60W,S4VX(M
Same model may have multiple batches, images only for reference.

TK6A60W,S4VX(M

Part No TK6A60W,S4VX(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 6.2 A
Drain to Source Resistance 750 mΩ
Element Configuration Single
Fall Time 7 ns
Gate to Source Voltage (Vgs) 30 V
Height 15 mm
Input Capacitance 390 pF
Length 10 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 30 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 30 W
Radiation Hardening No
Rise Time 18 ns
RoHS Compliant
Turn-Off Delay Time 55 ns
Turn-On Delay Time 40 ns
Width 4.5 mm
Win Source Part Number 1099470-TK6A60W,S4VX(M
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK6A60W,S4VX(M CAD Model

Description

The Toshiba Semiconductor and Storage TK6A60W,S4VX(M is an N-channel MOSFET transistor with a continuous drain current of 6.2A and a drain to source resistance of 750 mΩ.

  • Continuous Drain Current: 6.2A
  • Drain to Source Resistance: 750 mΩ
  • Maximum Power Dissipation: 30W
  • Gate to Source Voltage: 30V
  • Turn-On Delay Time: 40ns
  • Turn-Off Delay Time: 55ns
  • Mounting: Through-Hole
  • Length: 10mm
  • Width: 4.5mm
  • Height: 15mm
  • Input Capacitance: 390pF
  • Power Dissipation: 30W
  • Supply and Demand Status: Shortage

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1304 $50.8680
110+ $0.9276 $102.0360
170+ $0.8986 $152.7620
230+ $0.8696 $200.0080
300+ $0.8406 $252.1800
400+ $0.7536 $301.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,170 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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