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Same model may have multiple batches, images only for reference.
TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK7A55D(STA4,Q,M)

Part No TK7A55D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 7A TO-220SIS
Datasheet
TK7A55D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.25 Ohm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050560-TK7A55D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK7A55D(STA4,Q,M) CAD Model

Description

The Toshiba TK7A55D(STA4,Q,M) is a high-quality MOSFET used in various electronic devices.

  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 1050560-TK7A55D(STA4,Q,M)
  • Packaging: Tube/Rail
  • Mounting Type: Through-Hole
  • Category: Discrete Semiconductor Product
  • ECCN: EAR99
  • Maximum Power Dissipation: 35W (Tc)
  • Drain-Source Breakdown Voltage: 550V

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