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Same model may have multiple batches, images only for reference.
TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK8A55DA(STA4,Q,M)

Part No TK8A55DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 7.5A TO-220SIS
Datasheet
TK8A55DA(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.07 Ohm @ 3.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050569-TK8A55DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8A55DA(STA4,Q,M) CAD Model

Description

The 1050569-TK8A55DA(STA4,Q,M) is a through hole MOSFET technology semiconductor from Toshiba Semiconductor and Storage.

  • Polarity: N-channel
  • Power Dissipation (max): 40W (Tc)
  • Supply and Demand Status: Balanced
  • Packaging: Tube/rail
  • Mounting: Through hole
  • Temperature Range Operating: 150°C (TJ)
  • Case/Package: TO-220SIS
  • Dimension: TO-220-3 full pack
  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current @ 25°C: 7.5A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 16nC @ 10V
  • Max Input Capacitance: 800pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 1.07 Ohm @ 3.8A, 10V

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