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Same model may have multiple batches, images only for reference.
TK10A60W5,S5VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK10A60W5,S5VX

Part No TK10A60W5,S5VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9.7A TO-220SIS
Datasheet
TK10A60W5,S5VX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 500μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 720pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 4.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 107827-TK10A60W5,S5VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK10A60W5,S5VX CAD Model

Description

The Toshiba Semiconductor and Storage TK10A60W5,S5VX is an N-channel MOSFET with a maximum power dissipation of 30W.

  • Component Category: This component is a part of the Discrete Semiconductor Products category and has a medium popularity.
  • Supply and Demand: It has a limited supply and demand status.
  • Manufacturer: The component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 107827-TK10A60W5,S5VX.
  • Application: It can be used in various electronic circuits that require a MOSFET with a drain-source breakdown voltage of 600V.

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52+ $2.2557 $117.2964
80+ $2.1853 $174.8240
110+ $2.1148 $232.6280
142+ $2.0444 $290.3048
190+ $1.8330 $348.2700
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