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Same model may have multiple batches, images only for reference.
TK8A55DA Real Image
Same model may have multiple batches, images only for reference.

TK8A55DA

Part No TK8A55DA
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 7.5A TO-220SIS
Datasheet
TK8A55DA Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.07 Ohm @ 3.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212928-TK8A55DA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8A55DA CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel device with a maximum power dissipation of 40W (Tc) and a drain-source breakdown voltage of 550V.

  • Continuous Drain Current: 7.5A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Rds On at Id,Vgs: 1.07 Ohm @ 3.8A, 10V
  • Max Gate Charge: 16nC @ 10V
  • Package: TO-220SIS case
  • Dimension: TO-220-3 Full Pack
  • Description: It is ideal for use in Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $17.3192 $69.2768
9+ $14.2111 $127.8999
13+ $13.7664 $178.9632
18+ $13.3229 $239.8122
23+ $12.8783 $296.2009
31+ $11.5465 $357.9415
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Availability: 15,300 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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