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Same model may have multiple batches, images only for reference.
TK8A65D Real Image
Same model may have multiple batches, images only for reference.

TK8A65D

Part No TK8A65D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5A TO-220SIS
Datasheet
TK8A65D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 840 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212929-TK8A65D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8A65D CAD Model

Description

The Toshiba Semiconductor and Storage TK8A65D is an N-channel MOSFET with a maximum power dissipation of 45W (Tc).

  • Win Source Part Number: 212929-TK8A65D
  • Package: TO-220SIS package
  • Description: It is suitable for various applications that require an N-channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 8A (Ta).

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4500 $51.7500
275+ $0.3693 $101.5575
420+ $0.3577 $150.2340
580+ $0.3462 $200.7960
750+ $0.3347 $251.0250
1,000+ $0.3000 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,674 pieces
MOQ: 115 pcs
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