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Same model may have multiple batches, images only for reference.
TPC6008-H(TE85L,FM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC6008-H(TE85L,FM

Part No TPC6008-H(TE85L,FM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.9A VS6
Datasheet
TPC6008-H(TE85L,FM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 4.8nC @ 10V
Max Input Capacitance 300pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1111086-TPC6008-H(TE85L,FM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC6008-H(TE85L,FM CAD Model

Description

The Toshiba Semiconductor and Storage TPC6008-H(TE85L,FM is a N-channel MOSFET with a maximum power dissipation of 700mW (Ta).

  • Channel Type: N-channel
  • Maximum Power Dissipation: 700mW (Ta)
  • Category: Discrete semiconductor product
  • Case/Package: VS-6 (2.9x2.8)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 60 mOhm @ 3A, 10V
  • Supply and Demand Status: Sufficient

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