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Same model may have multiple batches, images only for reference.
TPC6107(TE85L,F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC6107(TE85L,F,M)

Part No TPC6107(TE85L,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A VS6 2-3T1A
Datasheet
TPC6107(TE85L,F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 9.8nC @ 5V
Max Input Capacitance 680pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 2.2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056761-TPC6107(TE85L,F,M)
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian TPC6107(TE85L,F,M) CAD Model

Description

The Toshiba Semiconductor and Storage 056761-TPC6107(TE85L,F,M) is a P-Channel MOSFET transistor that comes in a VS-6 (2.9x2.8) case/package.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.5A (Ta)
  • Maximum Rds On @ Id,Vgs: 55 mOhm @ 2.2A, 4.5V
  • Maximum Power Dissipation: 700mW (Ta)
  • Status: obsolete(EOL)
  • Temperature Range: 150°C (TJ)
  • Applications: industrial, power management, and portable devices
  • Dimension: thin SOT-23-6, TSOT-23-6
  • Gate-Source Threshold Voltage: 1.2V @ 200μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Input Capacitance: 680pF @ 10V
  • Supply and Demand Status: sufficient

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