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Same model may have multiple batches, images only for reference.
TPC6110 Real Image
Same model may have multiple batches, images only for reference.

TPC6110

Part No TPC6110
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.5A VS6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 510pF @ 10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2.2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056762-TPC6110
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC6110 CAD Model

Description

The Toshiba Semiconductor and Storage electronic component is a reliable and active product suitable for discrete semiconductor applications.

  • Maximum Power Dissipation: 700mW
  • Channel Type: P-Channel
  • Case/Package: VS-6 (2.9x2.8)
  • Maximum Continuous Drain Current @ 25°C: 4.5A
  • Gate-Source Threshold Voltage: 2V @ 100μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 510pF @ 10V
  • Maximum Rds On @ Id,Vgs: 56 mOhm @ 2.2A, 10V
  • Popularity: medium
  • Supply and demand status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5292 $58.7628
22+ $5.3569 $117.8518
34+ $5.1894 $176.4396
46+ $5.0219 $231.0074
60+ $4.8545 $291.2700
80+ $4.3532 $348.2560
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