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Same model may have multiple batches, images only for reference.
TPC8014 Real Image
Same model may have multiple batches, images only for reference.

TPC8014

Part No TPC8014
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A SOP8 2-6J1B
Datasheet
TPC8014 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1860pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056772-TPC8014
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8014 CAD Model

Description

The Toshiba Semiconductor and Storage TPC8014 is a N-channel MOSFET that is commonly used in various applications such as power supplies, motor drives, and DC-DC converters.

  • Supply and demand status: sufficient
  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 056772-TPC8014
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 11A (Ta)

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420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
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1,550+ $0.2241 $347.3550
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