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Same model may have multiple batches, images only for reference.
TPCA8010-H(TE12L.Q)
Same model may have multiple batches, images only for reference.

TPCA8010-H(TE12L.Q)

Part No TPCA8010-H(TE12L.Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 200V 5.5A 8-Pin SOP Advance T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 5.5 A
Current Rating 5.5 A
Drain to Source Voltage (Vdss) 200 V
Input Capacitance 600 pF
Lead Free Lead Free
Max Power Dissipation 45 W
Mount Surface Mount
Number of Pins 8
Packaging Cut Tape (CT)
Rds On Max 450 mΩ
Rise Time 7 ns
RoHS Compliant
Voltage Rating (DC) 200 V
Win Source Part Number 1201560-TPCA8010-H(TE12L.Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCA8010-H(TE12L.Q) CAD Model

Description

The TPC8010-H(TE12L.Q) is a MOSFET transistor from Toshiba Semiconductor and Storage that is designed for RF applications.

  • Drain to Source Voltage: 200 V
  • Continuous Drain Current: 5.5 A
  • Rise Time: 7 ns
  • Input Capacitance: 600 pF
  • Maximum Power Dissipation: 45 W
  • Rds On Max: 450 mΩ
  • RoHS Compliant: Yes
  • Package: Surface Mount
  • Pins: 8
  • Packaging: Cut Tape
  • Popularity: Medium
  • Supply and Demand Status: Limited

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