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TPCA8018-H

Part No TPCA8018-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A SOP-8 ADV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 2846pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 213278-TPCA8018-H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCA8018-H CAD Model

Description

The Toshiba TPCA8018-H is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 30A (Ta).

  • Manufacturer: Toshiba Semiconductor and Storage
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Ta): 30A
  • Package: 8-SOP Advance (5x5)
  • Mounting: Surface Mount
  • Operating Temperature: 150°C (TJ)
  • Gate-Source Voltage: ±20V
  • Max Rds On @ Id,Vgs: 6.2 mOhm @ 15A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • HTSUS Code: 8541.29.0095
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1576 $50.4320
775+ $0.1293 $100.2075
1,200+ $0.1253 $150.3600
1,650+ $0.1213 $200.1450
2,135+ $0.1172 $250.2220
2,855+ $0.1051 $300.0605
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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